Samsung Semiconductor Explains Photo Lithography and EUV in 5 Minutes

[Music] thank you this voice is an AI voice created by collecting the voices of employees of Samsung Electronics DS Samsung Foundry presented a paper on euv minimum pitch single patterning at the 2022 International interconnect technology conference along with our technical blog articles this video helps to explain the concepts and benefits of euv minimum pitch single patterning we'll start with an introduction to photolithography what is photolithography similar with the camera both telethography uses light and lenses to capture and print an object in semiconductor manufacturing complex patterns are printed in a small area by Shining Light through a mask since there are limitations to create and use a mask with small patterns a mask is created with patterns at a larger scale and lenses are used to refract the light coming through the mask to create accurate smaller patterns photo lithography uses photoresist ER to create patterns here are changes its structure when exposed to light here is first applied on the material and then exposed to light through a mask there are two types of Pia with a positive Pier light degrees of PR and the exposed areas are etched away with a negative PR light hardens the pure and only the exposed areas remain after etching photo lithography has many challenges from using light one challenge is Distortion caused by diffraction and interference as light passes through a mask diffraction and interference prevents the pattern from being created properly there are several methods to overcome the limitations from using light multiple patterning technology is the use of multiple masks and process steps to create a single pattern in figure a patterning is carried out by using four slits on a single mask unfortunately the resulting pattern is corrupted since the slits are too close to each other with MPT two masks are used to create the pattern as shown in figures B and C the four slits are divided into pairs without wider space between slits by patterning with two masks and steps light interference and Distortion are avoided and we can successfully create a clean pattern Optical proximity correction OPC is used to adjust mask patterns during the photo and etching steps the inherent properties of light can cause some patterns on the wafer to be thicker or thinner than the mask pattern in severe cases patterns May either completely disappear or merge with adjacent patterns OPC is used to add or remove shapes on a mask to compensate for these patterning errors as pattern Dimensions continue to shrink MPT and opco are insufficient to solve light Distortion issues we need to use light with a shorter wavelength like with shorter wavelengths have higher energy so the degree of diffraction and spread or reduced reducing wavelength to create a finer pattern is similar to using a thinner brush to draw a final line full pilotography technology has advanced over time through the use of light with shorter and shorter wavelengths aerf with a wavelength of 198 nanometer is no longer able to pattern efficiently for the latest process nodes extreme ultraviolet UV technology with a wavelength of 13.5 nanometer has emerged as the lithography solution for 7 nanometer and Below process nodes unfortunately use is not as easy to deploy as a erf while a ref light comes directly from a laser UV light is created by first shooting a CO2 laser at fallington to generate plasma the light from the plasma is then focused using mirrors to produce a UV light a downside to using shorter wavelengths is that the light is easily absorbed while passing through air and lenses puv lithography process solves these issues by operating with mirrors in a vacuum minimizing light absorption is crucial to providing sufficient light for PR patterning what about absorption by The Mask unlike a conventional mask with areas that either transmit or block light the mask for the dev process is made up of areas that either reflect or absorb light let's now summarize the operation of UV lithography with this diagram first UV light is generated by hitting 10 with a CO2 laser and focusing the plasma with mirrors the UV light is then reflected through mirrors to the mass the light pattern is then focused and reflected multiple times to reduce the pattern size before it arrives at the pr on the wafer the major differences between a ORF and euv photolithography app the light source for aerf is a laser while euv is generated from plasma airfuses lenses while euv uses mirrors and finally aorf masks transmit will block light while UV masks reflect the absorb light UV technology makes it possible to replace or reduce the use of MPT since it can patent and patterns with a single mask and single photolithography process UV reduces cost through the reduction of masks process steps and processing time with fewer process steps euv also reduces cost by improving yield as there are fewer steps the chance of defects caused by contamination is reduced although the base UV technology has provided many benefits Samsung Foundry continues to explore ways too more efficiently utilize UV for Semiconductor manufacturing please visit our website and follow our social media to keep updated on our Innovations [Music] thank you

Channel: Samsung Semiconductor Newsroom

Views: 16,795

Keywords: Samsung, Samsung Electronics, Samsung Semiconductor, Semiconductor, samsung semiconductor newsroom, samsung semiconductor, semiconductor, samsung manufacturing process, semiconductor photolithography, EUV process, EUV, foundry, photolithography PR, OPC, etching process, samsung foundry, photolithography process, foundry process technology, samsung semiconductor EUV, euv lithography explained, euv vs duv lithography, tsmc, asml

Id: m2WuoODe56U

Length: 5min 47sec (347 seconds)

Published: Fri Apr 28 2023